The Snapdragon 835 was hyped by Qualcomm to be a power chipset, built on top of an advanced Kryo architecture that made its debut last year on the 820. Combine that with more processing density in a 10nm fabrication and it would bring “27% higher performance” against 14nm chips.
While we have been sneaking peeks at what are purported to be unreleased Snapdragon 835 phones in benchmark rolls, we now have official benchmark runs off of a reference device — fair warning here that real-world results on real devices will vary — thanks to Android Police‘s David Ruddock’s reporting trip to company headquarter’s in San Diego (with transportation, lodging and board paid for by Qualcomm).
The reference device was tested across multiple programs and the scores are shown below.
- GeekBench 4 Single-Core: 2,059
- GeekBench 4 Multi-Core: 6,461
- GFXBench Car: 1,513
- GFXBench Manhattan 3.1: 2,668
- GFXBench Manhattan 3.0: 3,873
- GFXBench T-Rex: 6,625
- Antutu: 181,939
- 3DMark Slingshot 3.1: 3,803
- 3DMark Slingshot 3.0: 4,996
- 3DMark Ice Storm: 38,518
- PCM 1.1: 8,124
- Octane: 14,301
- Kraken: 2.308s
- SunSpider 237.4ms
All of these scores firmly beat the comparison devices that were tested alongside, including the OnePlus 3T and Pixel XL with the Snapdragon 821, the Galaxy S7 with the Exynos 8890, and a pre-production Huawei P10 with the Kirin 960 with a minimum marginal difference of 7 percent. You can click down to the source for more numbers.