Samsung believed in Qualcomm after the Snapdragon 810 flop, helping shape up the SD820 SoC which the Galaxy S7 then used in the US and China as opposed to the entirely homebrewed Exynos 8890. Now it’s the semiconductor specialist’s turn to return the favor, trusting in the chaebol’s advanced, industry-first 10nm FinFET technology, despite Samsung’s very full plate that could interfere with the production and release schedule of the Snapdragon 835 processor.

Forget 830, 825 or 823 naming speculation. The SD820 and 821’s H1 2017 sequel is something special, and the Snapdragon 835 moniker perfectly reflects its many notable improvements.

Unfortunately, Qualcomm only confirms a considerably “smaller chip footprint, giving OEMs more usable space inside upcoming products to support larger batteries or slimmer designs.” We’re told to expect “significant improvements in battery life”, while Samsung’s 10-nanometer die shrink theoretically allows “up to a 30% increase in area efficiency with 27% higher performance or up to 40% lower power consumption” compared to 14nm chips like the 820 and 821.

It’s important to note the Snapdragon 835 isn’t explicitly said to boost energy efficiency and raw speed by 30 or 40 percent, with details of that nature, as well as a CPU core count, frequency, GPU specs, memory or wireless capabilities coming later on, as we approach the vague “first half of 2017” commercial launch deadline.

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