8GB RAM smartphones now made possible by Samsung’s latest memory breakthrough
Yes, it’s that time of the year again. The time Samsung’s innumerable mobile component-manufacturing divisions claim bragging rights by technically paving the way for even faster, more power-efficient devices.
Unfortunately for the Korean consumer electronics giant, the official announcements of the industry’s first 10nm chipset and 8GB LPDDR4 DRAM package come at a somewhat inopportune moment, reminding us that perhaps the company is trying to do too many things at once.
It’s also important to remember 6GB RAM memory solutions entered mass production over a year ago, and yet the Galaxy C9 is still not out. So, no, we don’t reckon the Galaxy S8 will offer 8 gigs of the good stuff.
Next fall’s Galaxy Note 8 might, if it ever comes to fruition, which we’re starting to root for, considering how cool and game-changing this 8-gigabyte low power, double data rate 4 mobile DRAM package sounds.
Based on 10-nanometer-class process technology, which is a node situated “somewhere between” 10 and 20nm, it utilizes four 16 gigabit (Gb) LPDDR4 memory chips, operating at up to 4,266 megabits per second, compared to the typical DDR4 DRAM PC speed of 2,133 Mbps per pin.
In a nutshell, you’re looking at blazing fast smartphone memory… sooner or later, meeting the “escalating needs of devices having dual camera, 4K UHD screens and VR features.” Hmm, that sounds an awful lot like what we’re expecting from the Galaxy S8, so maybe we shouldn’t rule out an early 2017 commercial launch for the “industry’s first” 8GB RAM solution.
Source: Samsung Newsroom